X-ray diffraction study and electrical and thermal transport properties of the nGeTe•mBi2Te3 homologous series compounds

被引:51
|
作者
Shelimova, LE
Konstantinov, PP
Karpinsky, OG
Avilov, ES
Kretova, MA
Zemskov, VS
机构
[1] Russian Acad Sci, AA Baikov Inst Met & Mat Sci, Moscow 117911, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
semiconductors; X-ray diffraction; electrical transports; thermoelectric;
D O I
10.1016/S0925-8388(01)01685-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single crystals and powders of the ternary mixed layered homologous series of compounds nGeTe.mBi(2)Te(3) have been investigated by X-ray diffraction (XRD). It is found that a character of cleaved (00l) face XRD patterns for the nGeTe.mBi(2)Te, (0 <n/m less than or equal to3) single crystals varies in a regular manner with increasing ratio Win as far as the occupation of empty cation layers prevails. The hexagonal l-indices for these patterns are represented in generalized form as a function of two integers: n and m. X-ray powder diffraction of high members of the homologous series demonstrates that the alloys enriched by GeTe (3 <n/m less than or equal to9) contain a mixture of domains of different members of the homologous series. These alloys are characterized by extremely low thermal conductivity due to the high degree of lattice disorder. A plateau region in the temperature dependencies of the lattice thermal conductivity in the compounds with n/m >3 ratio is like that for amorphous materials. Hall coefficient and electrical resistivity were measured in the temperature range of 77-800 K. Seebeck coefficient and thermal conductivity were determined in the 90-450-K and 80-350-K temperature intervals, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:50 / 62
页数:13
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