Experimental and theoretical investigations on effects of hydrostatic pressure on the electrical properties of rhombohedral Sb2Te3

被引：6

作者：

Li, R. ^{[1
,2
]}

Guo, Y. H. ^{[2
,3
]}

Xu, B. ^{[2
,3
]}

Su, Y. ^{[2
,3
]}

Yin, J. ^{[2
,3
]}

Zhang, C. H. ^{[4
]}

Xia, Y. D. ^{[2
,3
]}

Liu, Z. G. ^{[2
,3
]}

Xu, Z. ^{[4
]}

Wu, L. C. ^{[5
]}

Song, Z. T. ^{[5
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[4] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710046, Peoples R China

[5] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

AIP ADVANCES | 2011年 / 1卷 / 04期

基金：

中国博士后科学基金;

关键词：

PHASE-CHANGE MATERIALS; TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; RANDOM-ACCESS MEMORY; BASIS-SET; TEMPERATURE; STORAGE; FILMS;

D O I：

10.1063/1.3655902

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the effect of the hydrostatic pressure on the electrical properties of the rhombohedral phase change material Sb2Te3 both experimentally and theoretically. The resistance can be reduced by 24.9% when the applied hydrostatic pressure reaches 0.377 GPa in the experiment, which is consistent with the results of the calculations by using the first principles theoretical method. The increase of the conductivity of Sb2Te3 under the hydrostatic pressure can be ascribed to the reduction of the electronic band gap. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3655902]

引用

页数：8

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