Dynamic Negative Bias Stress Instability Effects in Hafnium Silicon Oxynitride and Silicon Dioxide

被引：0

作者：

Mee, J. K. ^{[1
]}

Devine, R. A. B. ^{[1
,2
]}

Hjalmarson, H. P. ^{[3
]}

Kambour, K. ^{[3
]}

机构：

[1] AFRL RSVE, Kirtland AFB, NM 87117 USA

[2] EMRTC NMT, Socorro, NM 87801 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11 | 2011年 / 35卷 / 04期

关键词：

D O I：

10.1149/1.3572298

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Negative bias temperature instability (NBTI) is an issue of critical importance as the space electronics industry evolves because it may dominate the reliability lifetime of space based assets. Understanding its physical origin is therefore essential in determining how best to search for methods of mitigation. It has been suggested that the magnitude of the effect is strongly dependent on circuit operation conditions (static or dynamic modes). In the present work, we examine the time constants related to the charging and recovery of trapped charged induced by NBTI in HfSiON and SiO2 gate dielectric devices at room temperature.

引用

页码：447 / 459

页数：13

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