Determination of stress build-up during nanoimprint process in triangular Polymer structures

被引：3
|
作者：
Fernandez-Cuesta, I. [1 ]
Borrise, X. [1 ]
Retolaza, A. [2 ]
Merino, S. [2 ]
Mendels, D. -A. [3 ]
Hansen, O. [4 ]
Kristensen, A. [4 ]
Perez-Murano, F. [1 ]
机构：
[1] CSIC, Ctr Nacl Microelect, IMB, Barcelona, Spain
[2] Fdn Tekniker, Eibar, Guipuzkoa, Spain
[3] Natl Phys Lab, Teddington TW11 0LW, Middx, England
[4] Tech Univ Denmark, Nano DTU, MIC, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期
关键词：
nanoimprint lithography; polymer; PMMA; internal stress;
D O I：
10.1016/j.mee.2007.11.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanoimprint process in polymers may cause internal stress accumulation in the imprinted structures that can affect their quality, leading to defects or even fatal cracks. Relaxation effects can also diminish the long term stability of the imprinted features. In this work, direct strain related to residual stress has been characterized by high resolution AFM measurements in triangular shaped lines imprinted in PMMA 50k at different conditions. Finite elements simulations are in agreement with the experimental observations, and facilitate results interpretations. Relaxation effects have been also studied. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：838 / 841
页数：4
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