Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

被引：0
|
作者：
Xie Yan-Wu [1 ,2 ]
Shen Bao-Gen [2 ]
Sun Ji-Rong [2 ]
机构：
[1] Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China
来源：
CHINESE PHYSICS B | 2008年 / 17卷 / 06期
关键词：
manganite; magnetoresistance; manganite junction; annealing;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La(0.9)Ca(0.1)MnO(3+delta) film and a Nb-doped SrTiO(3) substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from similar to 60% to similar to 0. A possible mechanism accounting for this phenomenon is discussed.
引用
收藏
页码：2272 / 2276
页数：5
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