Room temperature positive magnetoresistance and field effect studies of manganite-based heterostructure

We report the results of studies of rectifying behavior, positive magneoresistance (MR), the charge-transport mechanism and the effect of an electric field on a ZnO (n)/La0.5Pr0.2Sr0.3MnO3 (LPSMO) (p)/SrNb0.002Ti0.998O3 (SNTO) (n) heterostructure comprising two p-n junctions fabricated using the pulsed laser deposition technique. The heterostructure exhibits rectifying behavior over a wide temperature and field range having hysteresis in I-V behavior (forward bias) due to the tunneling of charge carriers. It is also observed that, depending on the nature of the electric field bias to n-type ZnO and SNTO, the junction resistance becomes modified, which has been explained on the basis of spin injection in the heterostructure. The observation of unconventional positive MR at room temperature has been justified on the basis of interface effects and the reduction in barrier height obtained using fitting of the I-V data by a thermionic emission model.