Toughness and contact behavior of conventional and low-k dielectric thin films

被引:0
|
作者
Cook, RF [1 ]
Morris, DJ [1 ]
Thum, J [1 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A comprehensive indentation fracture mechanics framework is established that allows the fracture properties of thin films to be determined. The framework is composed of four stress-intensity factors characterizing the stress fields arising from (i) elastic contact, (ii) wedging, (iii) residual elastic-plastic mismatch and (iv) pre-existing film stress. The amplitudes of the stress-intensity factors depend on the deformation properties of the film and vary throughout the indentation cycle. The toughness values of a PVD alumina, for which (iii) and (iv) are dominant, and a low-k film, for which (i), (ii) and (iv) are dominant, are evaluated
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页码:119 / 130
页数:12
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