Cathodoluminescence of praseodymium doped AlN, GaN and turbo static BN.

被引：0
|
作者：
Maqbool, M [1 ]
Richardson, HH [1 ]
Kordesch, ME [1 ]
机构：
[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
来源：
GaN, AIN, InN and Their Alloys | 2005年 / 831卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Praseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100200 Watts RF power, 5-10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from Po-3 -> H-3(4), P-3(1) -> H-3(5), and P-3(0) -> F-3(2) transitions in AlN:Pr, P-3(0) -> H-3(4), P-3(0) -> H-3(6), and P-3(0) -> F-3(2) transitions in GaN:Pr and from P-3(0) -> H-3(4), P-3(1) -> H-3(5), P-3(0) -> H-3(6), and P-3(0) -> F-3(2) transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from S-1(0) -> D-1(2) and S-1(0) -> I-1(6) which are not observed in GaN:Pr and BN:Pr films.
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页码：417 / 421
页数：5
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