Temperature Dependence of the Giant Magnetoresistance in Fe/DNA/Fe Structure

被引:2
|
作者
Ketabi, S. A. [1 ]
Bahoosh, S. G. [2 ,3 ]
Shahtahmasebi, N. [2 ,3 ]
机构
[1] Damghan Univ Basic Sci, Sch Phys, Damghan 3671641167, Iran
[2] Ferdowsi Univ Mashhad, Dept Phys, Mashhad 9177893548, Iran
[3] Ferdowsi Univ Mashhad, Ctr Nanotechnol Res, Mashhad 9177893548, Iran
关键词
GMR; Spin-Dependent Transport; DNA; Green's Function Technique; Spintronics; MOLECULAR SPINTRONICS; TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; CARBON NANOTUBE; SPIN; FORMALISM; TRANSPORT; WIRES;
D O I
10.1166/jnn.2011.3485
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A numerical study is presented to investigate the spin-dependent transport through poly(dG)-poly(dC) DNA molecule sar dwiched between ferromagnetic contacts in the absence and in the presence of environmental effects. Making use of tight-binding procedure and within the framework of a generalized Green's function technique, the room temperature current voltage characteristics of DNA molecule and the grant magnetoresistance (GMR) of Electrode/DNA/Electrode structure, with iron (Fe) as the electrode are studied. It is found that the GMR to be lower than 12% for small applied bias and about 35% for applied bias larger than 2.5 volts. Considering the environmental effects, the GMR would be increased up to 13% at a bias lower than 2 volts and decreases up to 23% for the bias about 2.5 volts. In addition, our calculations indicate that for applied biases around 2.5 volts, the GMR decreases when the temperature increased.
引用
收藏
页码:8943 / 8946
页数:4
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