Structure of iridium silicide thin films and correlations with thermoelectric transport properties

Ir-Si belongs to the group of transition metal silicon systems which form a semiconducting, Si-rich silicide with interesting thermoelectric properties. In this paper we present the results of systematic investigations of the structure of binary and doped IrxSi1-x thin films prepared by different techniques of physical vapour deposition. The structure was analysed by means of X-ray and electron diffraction and by electron microscopy. From fitting methods of the diffraction patterns the crystal structure of the phases was calculated showing systematic deviations from the structure of single crystals. The results are discussed in correlation with the thermoelectric transport properties of the films.