ELECTRICAL TRANSPORT PROPERTIES OF TUNGSTEN SILICIDE THIN FILMS.

被引：16
|
作者：
Li, B.Z. [1 ]
Aitken, R.G. [1 ]
机构：
[1] Univ of Colorado at Colorado, Springs, Dep of Physics & Energy, Science, Colorado Springs, CO, USA, Univ of Colorado at Colorado Springs, Dep of Physics & Energy Science, Colorado Springs, CO, US
来源：
Applied Physics Letters | 1985年 / 46卷 / 04期
关键词：
D O I：
10.1063/1.95592
中图分类号：
学科分类号：
摘要：
13
引用
收藏
页码：401 / 403
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