Phased array operation of nanocrystalline porous silicon ultrasonic emitters

被引:7
|
作者
Hirota, J [1 ]
Kiuchi, A [1 ]
Koshida, N [1 ]
机构
[1] Tokyo Univ Agr & Technol, Fac Technol, Dept Elect & Elect Engn, Koganei, Tokyo 1848588, Japan
关键词
EMISSION;
D O I
10.1002/pssc.200461148
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To confirm the applicability of thermally induced ultrasound emission from nanocrystalline porous silicon (nc-PS) devices as directional sound emitter, the radiation pattern of one-dimensionally arrayed nc-PS device have been investigated. The nc-PS emitter is fabricated on a p-type Si substrate by conventional electrochemical anodization with subsequent formation of the surface electrode. It is shown that the emission pattern of arrayed devices can be controlled due to flat nature of the frequency response of the individual nc-PS devices. Furthermore we report a technique for wave control by phase-shift operation. This PS array enables the development of a directional sound emitter and intense sound source. (c) 2005 WrLEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3298 / 3302
页数:5
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