Quantum Hall plateau transition at order 1/N -: art. no. 046801

被引:7
|
作者
Moore, JE
Zee, A
Sinova, J
机构
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] Univ Calif Santa Barbara, Inst Theoret Phys, Santa Barbara, CA 93106 USA
[3] Univ Texas, Dept Phys, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.87.046801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The localization behavior of noninteracting two-dimensional electrons in a random potential and strong magnetic field is of fundamental interest for the physics of the quantum Hall effect. In order to understand the emergence of power-law delocalization near the discrete extended-state energies E-n = (h) over barw(c)(n + 1/2), we study a generalization of the disorder-averaged Liouvillian framework for the lowest Landau level to N flavors of electron densities (N = 1 for the physical case). We find analytically the large-N limit and 1/N corrections for all disorder strengths: at N = infinity this gives an estimate of the critical conductivity, and at order 1/N an estimate of the localization exponent v.
引用
收藏
页码:46801 / 1
页数:4
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