Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies

被引：0

作者：

Yagoubov, P ^{[1
]}

Kroug, M ^{[1
]}

Merkel, H ^{[1
]}

Kollberg, E ^{[1
]}

Schubert, J ^{[1
]}

Hübers, HW ^{[1
]}

Schwaab, G ^{[1
]}

Gol'tsman, G ^{[1
]}

Gershenzon, E ^{[1
]}

机构：

[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

来源：

THE NINETY EIGHT - 1998 IEEE SIXTH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS PROCEEDINGS | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2 x 2 mu m. The results of the DSB noise temperature are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz The RF bandwidth of the receiver is at least 2.5 THz The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.

引用

页码：149 / 152

页数：4

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