STM study of electrical transport properties of one dimensional contacts between MnSi∼1.7 nanowires and Si(111) and (110) substrates

We demonstrate the formation of contact barriers at the interfaces between MnSi1.7 nanowires (NWs) and Si substrates by the current-voltage (I-V) curves measured by scanning tunneling microscope with the tip contacting the NWs. The NWs on Si(110) exhibit linear reverse bias I-V curves, which suggests a parallel Ohmic surface state conductance of the Si(110) surface. The NWs on Si(111) exhibit nonlinear reverse bias I-V behavior, which indicates a considerable amount of minority carrier recombination-generation current. The NW length-dependence study of the forward bias current clearly shows that the quantitative change in NW length leads to a qualitative change in electrical transport properties. We derive a characteristic length L-C approximate to 200 nm and the corresponding aspect ratio of similar to 12-18 for MnSi1.7 NWs according to the variation of current density with the NW length.