Resistivity of Rotated Graphite-Graphene Contacts

被引:67
|
作者
Chari, Tarun [1 ]
Ribeiro-Palau, Rebeca [2 ]
Dean, Cory R. [2 ]
Shepard, Kenneth [1 ]
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
Graphene; graphite; contact resistivity; commensurate angles; BORON-NITRIDE; RESISTANCE; TRANSPORT; DEVICES;
D O I
10.1021/acs.nanolett.6b01657
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Robust electrical contact of bulk conductors to two-dimensional (2D) material, such as graphene, is critical to the use of these 2D materials in practical electronic devices. Typical metallic contacts to graphene, whether edge or areal, yield a resistivity of no better than 100 Omega mu m but are typically >10 k Omega mu m. In this Letter, we employ single-crystal graphite for the bulk contact to graphene instead of conventional metals. The graphite contacts exhibit a transfer length up to four-times longer than in conventional metallic contacts. Furthermore, we are able to drive the contact resistivity to as little as 6.6 Omega mu m(2) by tuning the relative orientation of the graphite and graphene crystals. We find that the contact resistivity exhibits a 60 degrees periodicity corresponding to crystal symmetry with additional sharp decreases around 22 degrees and 39 degrees, which are among the commensurate angles of twisted bilayer graphene.
引用
收藏
页码:4477 / 4482
页数:6
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