Low-Temperature Deposition of Silicon Nitride Films Using Ultraviolet-Irradiated Ammonia

被引：0
|
作者：
Shiba, Yoshinobu [1 ]
Teramoto, Akinobu [2 ,3 ]
Suwa, Tomoyuki [2 ]
Ishii, Katsutoshi [4 ]
Shimizu, Akira [4 ]
Umezawa, Kota [4 ]
Kuroda, Rihito [1 ]
Sugawa, Shigetoshi [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Aoba Ku, Sendai, Miyagi 9808579, Japan
[3] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
[4] Tokyo Electron, Hosaka Cho, Nirasaki City, Yamanashi 4070192, Japan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 11期
关键词：
CHEMICAL-VAPOR-DEPOSITION; ABSORPTION CROSS-SECTIONS; PLASMA; NH3;
D O I：
10.1149/2.0131911jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A low-temperature silicon nitride (SiNx:H) film-deposition technique that utilizes ultraviolet (UV)-irradiated ammonia (NH3) as the reactant gas and nonirradiated disilane (Si2H6) as the precursor gas was investigated. The UV light was only used to generate active species from NH3, not to irradiate the substrate. To determine the effect of the active species on the deposition process, SiNx:H films were deposited via chemical vapor deposition and their refractive index and composition ratio were evaluated. The results demonstrate that the highly reactive species generated from UV-light-irradiated NH3 enabled the deposition of nitrogen-containing films between 30 degrees C and 450 degrees C. N/Si ratio and refractive index of approximately 1.33 and 1.9-2.0, were obtained for a SiNx:H film deposited at 350 degrees C and 450 degrees C, respectively. (C) 2019 The Electrochemical Society.
引用
收藏
页码：P715 / P718
页数：4
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