Si3N4 fibers synthesized by thermal plasma CVD

被引：0

作者：

Bouyer, E ^{[1
]}

Henne, RH ^{[1
]}

Müller, M ^{[1
]}

Schiller, G ^{[1
]}

机构：

[1] DLR Zentrum, Inst Tech Thermodynam, D-70569 Stuttgart, Germany

来源：

CHEMICAL VAPOR DEPOSITION | 2001年 / 7卷 / 04期

关键词：

D O I：

10.1002/1521-3862(200107)7:4<139::AID-CVDE139>3.0.CO;2-P

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: Thermal Plasma Chemical Vapor Deposition (TP-CVD), a recent synthesis and deposition process applied for the synthesis and deposition Of Si3N4 fibers, is presented, Liquid disilane precursors, by-products from the silicone industry, are employed as reactant. Nitrogen is introduced as external nitriding agent in the form of plasma gas. The microstructure as well as phase content a or beta -Si3N4 can be controlled. The Figure shows an SEM picture of a Si3N4 coating.

引用

页码：139 / +

页数：5

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