Si3N4 fibers synthesized by thermal plasma CVD

被引：0
|
作者：
Bouyer, E [1 ]
Henne, RH [1 ]
Müller, M [1 ]
Schiller, G [1 ]
机构：
[1] DLR Zentrum, Inst Tech Thermodynam, D-70569 Stuttgart, Germany
来源：
CHEMICAL VAPOR DEPOSITION | 2001年 / 7卷 / 04期
关键词：
D O I：
10.1002/1521-3862(200107)7:4<139::AID-CVDE139>3.0.CO;2-P
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: Thermal Plasma Chemical Vapor Deposition (TP-CVD), a recent synthesis and deposition process applied for the synthesis and deposition Of Si3N4 fibers, is presented, Liquid disilane precursors, by-products from the silicone industry, are employed as reactant. Nitrogen is introduced as external nitriding agent in the form of plasma gas. The microstructure as well as phase content a or beta -Si3N4 can be controlled. The Figure shows an SEM picture of a Si3N4 coating.
引用
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页码：139 / +
页数：5
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