CdSexS1-x/CdS-cosensitized 3D TiO2 hierarchical nanostructures for efficient energy conversion

被引:8
|
作者
Lan, Zhang [1 ]
Chen, Xin [1 ]
Zhang, Sheng [1 ]
Wu, Jihuai [1 ]
机构
[1] Huaqiao Univ, Inst Mat Phys Chem, Engn Res Ctr Environm Friendly Funct Mat, Minist Educ,Coll Mat Sci & Engn, Xiamen 361021, Peoples R China
基金
中国国家自然科学基金;
关键词
Titanium dioxide hierarchical nanostructure; Quantum dot sensitized solar cell; Photovoltaic performance; CdSexS1-x quantum dots; SENSITIZED SOLAR-CELLS; LAYER ADSORPTION; NANOROD ARRAYS; PERFORMANCE; CDS; FABRICATION; ELECTRODES; ZNS;
D O I
10.1007/s10008-017-3748-3
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Three-dimensional TiO2 hierarchical nanostructures (3D-TiO2-HNs) containing TiO2 nanotrees and nest-like hollow spheres were synthesized and used as backbones for CdSexS1-x quantum dot (QD) loading. These CdSexS1-x QD-sensitized 3D-TiO2-HNs were then used as photoelectrodes in the preparation of quantum-dot-sensitized solar cells. As revealed by TEM images, the highly porous 3D-TiO2-HNs represent an excellent framework on which to deposit a large number of CdSexS1-x QDs in order to form homogeneous and compact CdSexS1-x-sensitized layers in photoelectrodes using a spin-assisted successive ionic layer adsorption and reaction method (spin-SILAR). Following careful adjustment of the molar ratio of Se2- to S2-, the number of spin-SILAR cycles, and the thickness of the CdS passivation layer used, the best-performing QDSC was shown to yield a short-circuit current density of 18.22 mA cm(-2), an open-circuit voltage of 0.520 V, a fill factor of 0.510, and a power conversion efficiency of 4.83%. This high performance is possible because the device is able to absorb a relatively broad range of wavelengths and because charge recombination is suppressed in the device.
引用
收藏
页码:347 / 353
页数:7
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