Effect of Pb impurity on the localized states of Se-Ge glassy alloy

被引：8

作者：

Kushwaha, V. S. ^{[1
]}

Kumar, A. ^{[1
]}

机构：

[1] Harcourt Butler Technol Inst, Dept Phys, Kanpur 208002, Uttar Pradesh, India

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2007年 / 353卷 / 52-54期

关键词：

amorphous semiconductors; chalcogenides; high field effects; defects;

D O I：

10.1016/j.jnoncrysol.2007.06.054

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Space charge limited conduction (SCLC) is investigated in vacuum evaporated thin films of (Ge20Se80)(1-x)Pb-x (x = 0, 0.02, 0.04, 0.06). I-V characteristics have been measured at various fixed temperatures. At high fields (similar to 10(4) V Cm-1), current could be fitted to the theory of space charge limited conduction in case of uniform distribution of localized states in the mobility gap of these materials. Using the above theory, the density of localized states near Fermi level is calculated. A reversal in density of localized states is obtained at 4 at.% of Pb. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：4718 / 4722

页数：5

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