Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers

A hybrid material including tin oxides on the top of a Ge0.3Si0.7-ySny/Si multiple quantum well structure has been first obtained. Tin oxides such as SnO and SnO2 were formed as a result of phase transitions during the oxidation of polycrystalline tin films (beta-Sn). The photoluminescence was demonstrated with a maximum intensity at about 2.34 eV, which corresponds to the band gap of SnO. The glow at the photogeneration point is seen in green. The photoluminescence from SnO is observed after the annealing in the temperature range of 300-400 degrees C. An increase in the annealing temperature leads to a sharp quenching of the photoluminescence. It is associated with the phase transition from SnO to SnO2. The growth of Ge0.3Si0.7-ySny/Si multilayer structures is studied at the Sn content from 0 to 18%. It was found that GeSiSn compounds are thermally stable in the annealing temperature range of 300-550 degrees C. In addition to the photoluminescence signal in the visible range from tin oxides, the photoluminescence signal in the infrared range of about 3 mu m appears. It is formed from the GeSiSn/Si structure.