Hydrogen induced changes on the electronic structure of carbon nitride films

被引:26
|
作者
Hammer, P [1 ]
Victoria, NM [1 ]
Alvarez, F [1 ]
机构
[1] Univ Estadual Campinas, IFGW, DFA, UNICAMP, BR-13083970 Campinas, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
hydrogenated amorphous carbon-nitrogen alloys; amorphous carbon; photoelectron; infra-red and visible spectroscopy;
D O I
10.1016/S0022-3093(98)00138-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of hydrogen on the electronic structure of amorphous carbon-nitrogen alloys (a-CN,) prepared by ion beam assisted (IBAD) deposition was studied by photoelectron spectroscopy. The effect of H on the local bonding structure of C and N atoms was inferred from the changes of the C Is and N Is core-level and the top of valence band spectra. The core-level spectrum of H free films are constituted of two N Is peaks identified as N bonded to sp(3) C and N bonded to sp(2) C, respectively. On increasing H content, the peak area ratio A(sp(3))/A(sp(2)) decreases and a new component associated with NH bonds emerges at 399.1 eV. Simultaneously, new features are observed at the top of the valence band. Besides the increasing NH absorption band (3350 cm(-1)), infrared spectra suggest a modification of the former disordered aromatic rings to a more Linear configuration. All the experimental information indicate that H promotes a polymeric-like structure. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:645 / 649
页数:5
相关论文
共 50 条
  • [31] Structure, composition and tribological properties of carbon nitride films
    Czyzniewski, A
    Precht, W
    Pancielejko, M
    Myslinski, P
    Walkowiak, W
    THIN SOLID FILMS, 1998, 317 (1-2) : 384 - 387
  • [32] Electronic structure of cubic gallium nitride films grown on GaAs
    Ding, SA
    Neuhold, G
    Weaver, JH
    Haberle, P
    Horn, K
    Brandt, O
    Yang, H
    Ploog, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 819 - 824
  • [33] ELECTRONIC-STRUCTURE OF NONSTOICHIOMETRIC BORON-NITRIDE FILMS
    SAKUMA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01): : 19 - 24
  • [34] Comparative study on the bonding structure of hydrogenated and hydrogen free carbon nitride films with high N content
    Hammer, P
    Lacerda, RG
    Droppa, R
    Alvarez, F
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 577 - 581
  • [35] Axial strain and twist-induced changes in the electronic structure of carbon nanotubes
    Wang, Shaofeng
    Wang, Rui
    Wu, Xiaozhi
    Zhang, Huili
    Liu, Ruiping
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 42 (09): : 2250 - 2256
  • [36] Electronic and atomic structure of evaporated carbon films
    Schelz, S.
    Richmond, T.
    Kania, P.
    Oelhafen, P.
    Guntherodt, H.-J.
    Elsevier Science B.V., Amsterdam, Netherlands (359): : 1 - 3
  • [37] Electronic and atomic structure of evaporated carbon films
    Schelz, S
    Richmond, T
    Kania, P
    Oelhafen, P
    Guntherodt, HJ
    SURFACE SCIENCE, 1996, 359 (1-3) : 227 - 236
  • [38] Electronic structure of boron nitride nanostructures doped with a carbon atom
    R. D. Gonçalves
    S. Azevedo
    F. Moraes
    M. Machado
    The European Physical Journal B, 2010, 73 : 211 - 214
  • [39] Thermodynamic stability and electronic structure of small carbon nitride nanotubes
    Hales, John
    Barnard, Amanda S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (14)
  • [40] Shear-Induced Changes of Electronic Properties in Gallium Nitride
    Zeng, Guosong
    Yang, Xiaofang
    Tan, Chee-Keong
    Marvel, Christopher J.
    Koel, Bruce E.
    Tansu, Nelson
    Krick, Brandon A.
    ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (34) : 29048 - 29057