Improved Surge Current Capability of Power Diode with Copper Metallization and Heavy Copper Wire Bonding

被引：0

作者：

Ke, Maolong ^{[1
]}

Li, Daohui ^{[1
]}

Dai, Xiaoping ^{[1
]}

Jiang, Huaping ^{[1
]}

Deviny, Ian ^{[1
]}

Luo, Haihui ^{[2
]}

Liu, Guoyou

机构：

[1] Dynex Semicond Ltd, Power Semicond R&D Ctr, Lincoln LN6 3LF, England

[2] CRRC Times Elect Co Ltd, Zhuzhou, Peoples R China

来源：

2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE) | 2016年

关键词：

Fast Recovery Diode; Copper Metallization; Copper wire bonding; Surge Current;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper metallization and copper wire bonding of high power semiconductor devices have attracted growing attention in recent years due to potentially much improved reliability and increased lifetime. However, significant technical challenges still remain for its wide commercial use. Here a thick copper layer has been successfully grown onto 3300V fast recovery diodes and subsequently 16mil copper wires were used to bond the chips onto substrates. Much improved surge current performance of these copper metallized and heavy copper wire-bonded diodes over its aluminium counterpart is reported here, and the results are analysed with the help of simulation.

引用

页数：6

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