Leakage current spectroscopy of epitaxial ferroelectric/semiconductor heterostructures and their memory effect

被引：2

作者：

Watanabe, Y ^{[1
]}

Sawamura, D ^{[1
]}

Okano, M ^{[1
]}

Toyama, N ^{[1
]}

机构：

[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 804, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

ferroelectric; heterostructure; leakage current; diode; memory effect; nano-scale;

D O I：

10.1016/S0169-4332(98)00138-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskite-semiconductor heterostructures was measured down to fA by changing applied voltage and the ambient temperature. At low applied voltage, the leakage current through the BaTiO3/hole-conduction-type semiconductor was relaxation-dominated and symmetric with regard to bias polarity, while it exhibited an ohmic conduction in BaTiO3/electron-conduction-type semiconductor. The current exhibited reproducible memory effect at a high forward bias which was sufficiently low to preserve insulating property. Similar current-voltage characteristics were found using a nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the transient process of the band bending at BaTiO3 surface explains the above observations. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：682 / 688

页数：7

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