Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure

被引：2

作者：

Takahashi, Mitsue ^{[1
]}

Kodama, Kazushi ^{[1
]}

Nakaiso, Toshiyuki ^{[1
]}

Noda, Minoru ^{[1
]}

Okuyama, Masanori ^{[1
]}

机构：

[1] Department of Physical Science, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, 560-8531, Japan

来源：

| 2001年 / Taylor and Francis Inc., 325 Chestnut St, Suite 800, Philadelphia PA, PA 19106, United States卷 / 40期

关键词：

Ferroelectric materials - Insulating materials - Semiconductor materials;

D O I：

10.1080/10584580108010835

中图分类号：

学科分类号：

摘要：

Retention characteristics of MFIS (metal-ferroelectric-insulator- semiconductor) structures have been investigated theoretically and experimentally. The simulated retention characteristics have indicated that reducing current through the ferroelectric layer is very effective to make the retention time long. In order to reduce the current through the ferroelectric layer, an MFIS with an improved ferroelectric layer and an M-I-FIS (metal-insulator-ferroelectric-insulator-semiconductor) have been investigated theoretically. Both of them have given good retention characteristics. Experimentally, retention characteristics of MFIS have been much improved by annealing, which is considered to suppress the current density in the ferroelectric layer, although those of M-I-FIS have been improved a little. © 2001 Taylor and Francis.

引用

页码：1 / 5

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