Enhanced growth rate in atomic layer epitaxy of indium oxide and indium-tin oxide thin films

被引：0

作者：

Ritala, M ^{[1
]}

Asikainen, T ^{[1
]}

Leskelä, H ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Growth rates of In2O3 and In2O3:Sn (ITO) films were increased 6y substituting water with hydrogen peroxide in the atomic layer epitaxy processes where InCl3 and SnCl4 served as metal precursors. The growth rate of In2O3 increased from 0.27 to 0.40 Angstrom/cycle, and that of ITO from 0.20 to 0.32 Angstrom/cycle. By optimizing the pulse and purge times the overall deposition rate could be increased further, from 0.65 to 2.0 nm/min, for In2O3 grown at 500 degrees C. Film properties, such as high conductivity and transmittance, remained the same for the two oxygen precursors. (C) 1998 The Electrochemical Society. S1099-0062(98)04-011-5. All rights reserved.

引用

页码：156 / 157

页数：2

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