Dislocation interactions at reduced strain rates in atomistic simulations of nanocrystalline Al

被引:25
|
作者
Dupraz, Maxime [1 ]
Sun, Zhen [1 ,2 ]
Brandl, C. [3 ]
Van Swygenhoven, Helena [1 ,2 ]
机构
[1] Paul Scherrer Inst, SLS, CH-5232 Villigen, Switzerland
[2] Ecole Polytech Fed Lausanne, IMX, NXMM Lab, CH-1015 Lausanne, Switzerland
[3] Karlsruhe Inst Technol, IAM, WBM, D-76344 Eggenstein Leopoldshafen, Germany
基金
欧洲研究理事会; 瑞士国家科学基金会;
关键词
Nanocrystalline materials; Molecular dynamics; Reduced strain rate; Interaction dislocations/grain boundaries; MOLECULAR-DYNAMICS SIMULATIONS; MECHANICAL-PROPERTIES; PLASTIC-DEFORMATION; GRAIN-BOUNDARIES; RATE SENSITIVITY; CROSS-SLIP; METALS; NUCLEATION; TWINS; TRANSITIONS;
D O I
10.1016/j.actamat.2017.10.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular dynamics simulations of transient stress drops have been carried out in different regimes on a nanocrystalline Aluminum sample with average grain size of 12 nm. Besides confirming the interpretation of experimental results obtained during in situ X-ray diffraction, the creep simulations performed at 2 or 3 orders of magnitude lower strain rates than usual reveal deformation mechanisms that have not been observed previously. First of all, it is evidenced that the misfit dislocations available at the GB assist the propagation of a lattice dislocation on a plane with low resolved shear stress. Furthermore, it is shown that the interaction of two dislocations gliding on parallel slip planes can result in the emission of a vacancy in the grain interior. Finally, the importance of the Schmid factor in the activation of slip in nanocrystalline structures is discussed. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd.
引用
收藏
页码:68 / 79
页数:12
相关论文
共 50 条
  • [21] Dislocation motion in tungsten: Atomistic input to discrete dislocation simulations
    Srivastava, K.
    Groeger, R.
    Weygand, D.
    Gumbsch, P.
    [J]. INTERNATIONAL JOURNAL OF PLASTICITY, 2013, 47 : 126 - 142
  • [22] Atomistic simulations of dislocation-interface interactions in the Cu-Ni multilayer system
    Rao, SI
    Hazzledine, PM
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2000, 80 (09): : 2011 - 2040
  • [23] Concurrent atomistic-continuum simulations of dislocation-void interactions in fcc crystals
    Xiong, Liming
    Xu, Shuozhi
    McDowell, David L.
    Chen, Youping
    [J]. INTERNATIONAL JOURNAL OF PLASTICITY, 2015, 65 : 33 - 42
  • [24] Concurrent atomistic-continuum simulations of dislocation-void interactions in fcc crystals
    Xiong, Liming
    Xu, Shuozhi
    McDowell, David L.
    Chen, Youping
    [J]. International Journal of Plasticity, 2015, 65 : 33 - 42
  • [25] Atomistic simulations of dislocation-interface interactions in the Cu-Ni multilayer system
    Rao, SI
    Hazzledine, PM
    [J]. MULTISCALE PHENOMENA IN MATERIALS-EXPERIMENTS AND MODELING, 2000, 578 : 389 - 394
  • [26] Atomistic simulations of dislocation-precipitate interactions emphasize importance of cross-slip
    Singh, C. V.
    Mateos, A. J.
    Warner, D. H.
    [J]. SCRIPTA MATERIALIA, 2011, 64 (05) : 398 - 401
  • [27] Atomistic simulations of spherical indentations in nanocrystalline gold
    Feichtinger, D
    Derlet, PM
    Van Swygenhoven, H
    [J]. PHYSICAL REVIEW B, 2003, 67 (02)
  • [28] Atomistic simulations of grain boundary dislocation nucleation
    Tschopp, Mark
    McDowell, David L.
    [J]. ADVANCES IN HETEROGENEOUS MATERIAL MECHANICS 2008, 2008, : 97 - 104
  • [29] DISLOCATION DYNAMICS AND MULTIPLICATION VIA ATOMISTIC SIMULATIONS
    CLAPP, PC
    GLAZOV, MV
    RIFKIN, JA
    [J]. JOURNAL DE PHYSIQUE IV, 1993, 3 (C7): : 2005 - 2014
  • [30] Dynamic aspects of dislocation motion: atomistic simulations
    Bitzek, E
    Gumbsch, P
    [J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2005, 400 : 40 - 44