Dispersion of optical anisotropy in nanostructurized silicon films

被引：15
|
作者：
Golovan', LA [1 ]
Konstantinova, AF
Imangazieva, KB
Krutkova, EY
Timoshenko, VY
Kashkarov, PK
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119992, Russia
[2] Russian Acad Sci, Shubnikov Inst Crystallog, Moscow 119333, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2004年 / 49卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1643977
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optical characteristics of (110) oriented porous silicon films obtained by electrochemical etching are studied. Dispersion of refractive indices, dichoroism in the visible range of the spectrum, depolarization factor, and porosity of silicon films are measured. It is shown that the results obtained may be described based on the generalized Bruggeman model. Possible causes of the established discrepancies between the experimental data and the model are discussed. (C) 2004 MAN "Nauka/Interperiodica".
引用
收藏
页码：143 / 148
页数：6
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