Novel approach to low-voltage low-power bandgap reference voltage in standard CMOS process

This paper presents a novel approach to the design and post-layout simulation results of a low-voltage and low-power bandgap reference voltage in standard CMOS process. The proposed circuit makes use of a positive- and negative-temperature coefficient PTAT summed up to a resistive load to generate a low TC bandgap output reference voltage. Hspice-based simulations demonstrate that the reference circuit temperature coefficient (TC) is 93.3 ppm/degrees C in the temperature range from -20 to +70 degrees C under a 1 V supply voltage while dissipating 86.19 mu W. The output can be adjusted to a desired level independently of being set to a specific TC by the selection of the design parameters such as resistors, and transistor aspect ratios.