Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces

被引：2
|
作者：
Dorogan, V. G. [1 ]
Wang, Zh. M. [1 ]
Kunets, Vas. P. [1 ]
Schmidbauer, M. [2 ]
Xie, Y. Z. [1 ]
Teodoro, M. D. [1 ]
Lytvyn, P. M. [3 ]
Mazur, Yu. I. [1 ]
Salamo, G. J. [1 ]
机构：
[1] Univ Arkansas, Arkansas Inst Nanoscale Mat Sci & Engn, Fayetteville, AR 72701 USA
[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
[3] NAS Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 09期
关键词：
InGaAs quantum wires; Optical polarization; X-ray diffraction; GROWTH;
D O I：
10.1016/j.matlet.2011.02.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly ordered three-dimensional periodic arrays of In0.40Ga0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1427 / 1430
页数：4
相关论文
共 50 条
  • [31] INGAAS QUANTUM-WELL WIRES GROWN ON PATTERNED GAAS SUBSTRATES
    MIRIN, RP
    TAN, IH
    WEMAN, H
    LEONARD, M
    YASUDA, T
    BOWERS, JE
    HU, EL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 697 - 700
  • [32] INGAAS/GAAS QUANTUM WIRES DEFINED BY LATERAL TOP BARRIER MODULATION
    GREUS, C
    FORCHEL, A
    STRAKA, J
    PIEGER, K
    EMMERLING, M
    APPLIED PHYSICS LETTERS, 1992, 61 (10) : 1199 - 1201
  • [33] Growth and device applications of GaAs and InGaAs quantum wires on patterned substrates
    Ogura, Mutsuo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (03) : 1442 - 1448
  • [34] Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs
    Ahopelto, J
    Sopanen, M
    Lipsanen, H
    Lourdudoss, S
    Messmer, ER
    Hofling, E
    Reithmaier, JP
    Forchel, A
    Petersson, A
    Samuelson, L
    APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2828 - 2830
  • [35] Relaxation processes in GaAs and InGaAs V-shaped quantum wires
    Cingolani, R
    Rinaldi, R
    Giugno, PV
    Lomascolo, M
    DiDio, M
    Marti, U
    Martin, D
    Reinhart, FK
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 315 - 318
  • [36] InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties
    Liang, B. L.
    Wang, Zh M.
    Mazur, Yu I.
    Strelchuck, V. V.
    Holmes, K.
    Lee, J. H.
    Salamo, G. J.
    NANOTECHNOLOGY, 2006, 17 (11) : 2736 - 2740
  • [37] The importance of high-index surfaces for the morphology of GaAs quantum dots
    Platen, J
    Kley, A
    Setzer, C
    Jacobi, K
    Ruggerone, P
    Scheffler, M
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3597 - 3601
  • [38] MORPHOLOGY AND OPTICAL-PROPERTIES OF STRAINED INGAAS QUANTUM WIRES
    MIRIN, R
    KRISHNAMURTHY, M
    TAN, IH
    BOWERS, JE
    GOSSARD, AC
    HU, EL
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 881 - 886
  • [39] Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces
    Martini, S
    Quivy, AA
    Tabata, A
    Leite, JR
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2280 - 2289
  • [40] OPTICAL-PROPERTIES OF A SINGLE STRAINED INGAAS/GAAS QUANTUM-WELL GROWN ON VICINAL GAAS-SURFACES
    DROOPAD, R
    PUECHNER, RA
    SHIRALAGI, KT
    CHOI, KY
    MARACAS, GN
    APPLIED PHYSICS LETTERS, 1991, 58 (16) : 1777 - 1779
12345