Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces

被引：2
|
作者：
Dorogan, V. G. [1 ]
Wang, Zh. M. [1 ]
Kunets, Vas. P. [1 ]
Schmidbauer, M. [2 ]
Xie, Y. Z. [1 ]
Teodoro, M. D. [1 ]
Lytvyn, P. M. [3 ]
Mazur, Yu. I. [1 ]
Salamo, G. J. [1 ]
机构：
[1] Univ Arkansas, Arkansas Inst Nanoscale Mat Sci & Engn, Fayetteville, AR 72701 USA
[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
[3] NAS Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
MATERIALS LETTERS | 2011年 / 65卷 / 09期
关键词：
InGaAs quantum wires; Optical polarization; X-ray diffraction; GROWTH;
D O I：
10.1016/j.matlet.2011.02.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly ordered three-dimensional periodic arrays of In0.40Ga0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1427 / 1430
页数：4
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