The influence of crystallographic orientation on the wetting of silicon on quartz single crystals

被引：11

作者：

Weiss, Daniel ^{[1
]}

Gebensleben, Tim ^{[1
]}

Diestel, Lisa ^{[1
]}

Alphei, Lukas ^{[1
]}

Becker, Verena ^{[1
]}

Becker, Joerg August ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Phys Chem & Elektrochem, D-30167 Hannover, Germany

来源：

JOURNAL OF MATERIALS SCIENCE | 2011年 / 46卷 / 10期

关键词：

OXYGEN-TRANSPORT; MARANGONI FLOW; MOLTEN SILICON; SOLID SILICA; GROWTH; MELT; SURFACE; SIO2; EQUILIBRIUM; DYNAMICS;

D O I：

10.1007/s10853-010-5246-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dynamic hexagonal spreading patterns of small silicon droplets on the basal plane (001) of quartz were observed by video microscopy. A detailed analysis of the hexagonal triple line demonstrates that the patterns show slight chiral distortions that can be attributed to the screw axis of the substrate crystal. This article reveals the detailed influence of crystal symmetry on the anisotropy of reactive wetting. In this context, a first discussion about the interplay of wetting and etching of a crystal is provided.

引用

页码：3436 / 3444

页数：9

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