Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

被引：14

作者：

Jamarkattel, Manoj K. ^{[1
]}

Phillips, Adam B. ^{[1
]}

Subedi, Indra ^{[1
]}

Abudulimu, Abasi ^{[1
]}

Bastola, Ebin ^{[1
]}

Li, Deng-Bing ^{[1
]}

Mathew, Xavier ^{[1
,2
]}

Yan, Yanfa ^{[1
]}

Ellingson, Randy J. ^{[1
]}

Podraza, Nikolas J. ^{[1
]}

Heben, Michael J. ^{[1
]}

机构：

[1] Univ Toledo, Wright Ctr Photovolta Innovat & Commercializat, Dept Phys & Astron, Toledo, OH 43606 USA

[2] Univ Nacl Autonoma Mexico, Inst Engergias Renovables, Temixco 62580, Morelaos, Mexico

来源：

ACS APPLIED ENERGY MATERIALS | 2022年 / 5卷 / 05期

关键词：

CdTe; photovoltaics; emitter; indium gallium oxide; front interface; band alignment; OPTICAL-PROPERTIES; LAYERS; FILMS; GAP;

D O I：

10.1021/acsaem.2c00153

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

There are limited choices for front-surface, electron-selective contacts (emitters) for CdTe solar cells, thus hindering scientific and technical development. Here we investigate the photovoltaic performance of devices fabricated with (InxGa1-x)(2)O-3 (IGO) emitters with varying In-to-Ga ratios prepared by cosputtering. In agreement with predictions, an IGO emitter with a 4.03 eV bandgap (x = 0.36) allowed fabrication of devices with efficiencies of 16%. Increasing the performance to higher values will be enabled by increasing the transmission through the IGO-coated substrate and decreasing the bulk and back interface recombination. These findings demonstrate IGO materials as effective emitters in high-efficiency CdTe-based solar cells.

引用

页码：5484 / 5489

页数：6

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