Resistive switching and memory effects of AgI thin film

A memory device has been fabricated using an AgI film sandwiched between a Pt film and an Ag film with the lateral size of the device scaled down to 300 nm. The AgI film was made by the iodination of the Ag film at room temperature and under ambient pressure. The switching between high- and low-resistance states can be realized by applying voltages of different polarities. The switching can be performed under the application of voltage pulses with a 100 Hz frequency for similar to 10(3) times. The switching times are in the order of microseconds and the retention time is about a week. The switching effects are explained as the electrochemical growth and dissolution of Ag in AgI.