Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

被引：62

作者：

Liu, Zhiwei ^{[1
]}

Liou, Juin J. ^{[1
,2
]}

Dong, Shurong ^{[2
]}

Han, Yan ^{[2
]}

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA

[2] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Electrostatic discharge (ESD); high holding voltage; latchup; silicon-controlled rectifier (SCR); SCR;

D O I：

10.1109/LED.2010.2050575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.

引用

页码：845 / 847

页数：3

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