Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

被引：0
|
作者：
Kazanskii, AG [1 ]
Mell, H
Terukov, EI
Forsh, PA
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 07期
关键词：
D O I：
10.1134/1.1592847
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Changes in the dark conductivity of erbium-doped amorphous hydrogenated silicon (a-Si:H(Er)) films after their preliminary illumination at room temperature have been studied. The effect of a compensating boron impurity on the photoinduced change in the conductivity of a-Si:H(Er) films is analyzed. It is established that the magnitude and the sign of the change in conductivity depend on the duration of illumination and position of the Fermi level in the mobility gap. Possible mechanisms leading to a photoinduced change in the conductivity of a-Si:H(Er) films are discussed. (C) 2003 MAIK "Nauka/Interperiodica".
引用
收藏
页码：766 / 768
页数：3
相关论文
共 50 条
  • [41] PHOTOINDUCED REVERSIBLE CHANGE OF TOPOLOGICAL DISORDER IN HYDROGENATED AMORPHOUS-SILICON
    HAN, DX
    QUI, CH
    WU, WH
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : L9 - L13
  • [42] PHOTOINDUCED STRUCTURAL-CHANGE IN THE DEFECTS IN A HYDROGENATED AMORPHOUS-SILICON
    PETUKHOV, AG
    RADCHIK, AV
    FOIGEL, MG
    JETP LETTERS, 1985, 41 (12) : 612 - 615
  • [43] Erbium-doped silicon and porous silicon for optoelectronics
    Reed, GT
    Kewell, AK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 40 (2-3): : 207 - 215
  • [44] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, E.I.
    Kudoyarova, V.Kh.
    Kuznetsov, A.N.
    Fuhs, W.
    Weiser, G.
    Kuehne, H.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 488 - 492
  • [45] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, EI
    Kudoyarova, VK
    Kuznetsov, AN
    Fuhs, W
    PHYSICS AND APPLICATIONS OF NON-CRYSTALLINE SEMICONDUCTORS IN OPTOELECTRONICS, 1997, 36 : 474 - 474
  • [46] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, EI
    Kudoyarova, VK
    Kuznetsov, AN
    Fuhs, W
    Weiser, G
    Kuehne, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 488 - 492
  • [47] Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
    Bresler, MS
    Gusev, OB
    Pak, PE
    Terukov, EI
    Tséndin, KD
    Yassievich, IN
    SEMICONDUCTORS, 1999, 33 (06) : 622 - 623
  • [48] Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)
    Liang, JJ
    Chen, WD
    Wang, YQ
    He, J
    Zheng, WM
    Wang, ZG
    CHINESE PHYSICS LETTERS, 2000, 17 (11) : 838 - 840
  • [49] Active Erbium-Doped Silicon Nanoantenna
    Yaroshenko, Vitaly
    Obramenko, Marina
    Dyatlovich, Anna
    Kustov, Pavel
    Gudovskikh, Alexander
    Goltaev, Aleksandr
    Mukhin, Ivan
    Ageev, Eduard
    Zuev, Dmitry
    LASER & PHOTONICS REVIEWS, 2023, 17 (04)
  • [50] PHOTOLUMINESCENCE MEASUREMENTS ON ERBIUM-DOPED SILICON
    DEMAATGERSDORF, I
    GREGORKIEWICZ, T
    AMMERLAAN, CAJ
    SOBOLEV, NA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (05) : 666 - 671
12345