Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

被引：0
|
作者：
Kazanskii, AG [1 ]
Mell, H
Terukov, EI
Forsh, PA
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
[2] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 07期
关键词：
D O I：
10.1134/1.1592847
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Changes in the dark conductivity of erbium-doped amorphous hydrogenated silicon (a-Si:H(Er)) films after their preliminary illumination at room temperature have been studied. The effect of a compensating boron impurity on the photoinduced change in the conductivity of a-Si:H(Er) films is analyzed. It is established that the magnitude and the sign of the change in conductivity depend on the duration of illumination and position of the Fermi level in the mobility gap. Possible mechanisms leading to a photoinduced change in the conductivity of a-Si:H(Er) films are discussed. (C) 2003 MAIK "Nauka/Interperiodica".
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收藏
页码：766 / 768
页数：3
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