Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory

被引：11

作者：

Zhou, Kuan-Ju ^{[1
]}

Chang, Ting-Chang ^{[1
]}

Lin, Chih-Yang ^{[1
]}

Chen, Chun-Kuei ^{[1
]}

Tseng, Yi-Ting ^{[1
]}

Zheng, Hao-Xuan ^{[1
]}

Chen, Hong-Chih ^{[1
]}

Sun, Li-Chuan ^{[2
]}

Lien, Chih-Ying ^{[1
]}

Tan, Yung-Fang ^{[2
]}

Wu, Chung-Wei ^{[1
]}

Yeh, Yu-Hsuan ^{[1
]}

Sze, Simon M. ^{[3
,4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 02期

关键词：

Titanium; Hafnium oxide; Schottky thermal emission; hopping conduction; TIO2;

D O I：

10.1109/LED.2019.2961408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the electrical characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) were thoroughly investigated. An abnormal current degradation was seen in the DC sweeping cycle. Both the on-state and off-state current clearly exhibited degradation with time. Next, current fitting analysis was used to investigate the carrier transport mechanisms. The results indicate that the on-state carrier transport mechanism changed from space-charge-limited current into hopping conduction after cycle sweeping. However, the off-state current changes from Schottky thermal emission to hopping conduction. Based on comparisons of different Schottky distances and Schottky barriers, physical models were proposed to explain the abnormal current degradation behavior. Finally, COMSOL electric field simulations were used to show the electric field distribution around the conducting filament (CF), and the conducting model was subsequently verified.

引用

页码：224 / 227

页数：4

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