Development of a high voltage intelligent power module (HVIPM)

被引：0
|
作者：
Tanaka, T [1 ]
Mizoshiri, T [1 ]
Suekawa, E [1 ]
Umesaki, I [1 ]
Kawaguchi, Y [1 ]
Donlon, JF [1 ]
机构：
[1] Mitsubishi Electr Corp, Power Device Div, Fukuoka, Japan
来源：
PESC'03: 2003 IEEE 34TH ANNUAL POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-4, CONFERENCE PROCEEDINGS | 2003年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A High Voltage Intelligent Power Module (HVIPM) rated at 600A, 6.5kV has been developed using an optimized punch through IGBT chip, coordinated Free-wheel Diode, high quality manufacturing processes, and high performance gate control technology.
引用
收藏
页码：817 / 821
页数：5
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