Determination of dislocation density in epitaxially grown GaN using an HCl etching process

被引：14

作者：

Habel, F ^{[1
]}

Seyboth, M ^{[1
]}

机构：

[1] Univ Ulm, Optoelect Dept, D-89069 Ulm, Germany

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303295

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Dislocation analysis of epitaxially grown GaN was performed using an HCl vapor phase etching process. The effects of the major process parameters temperature, pressure and gas composition have been studied in detail. For reliable results a large size of the etch pits is required, but a merging of the pits has to be avoided. A temperature of 600 degreesC, a reactor pressure of 940 mbar and an HCl concentration of 10% lead to best results and highest etch rates, respectively (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Wemheim

引用

页码：2448 / 2451

页数：4

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