Effect of dislocations on phonon drag thermopower in GaN/AlGaN heterojunctions

被引：0

作者：

Kamatagi, M. D. ^{[1
]}

Sankeshwar, N. S. ^{[2
]}

Mulimani, B. G. ^{[2
]}

机构：

[1] BVB Coll Engn & Technol, Dept Phys, Hublin 580031, India

[2] Gulbarga Univ, Dept Phys, Gulbarga 585106, India

来源：

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年

关键词：

gallium compounds; semiconductor heterojunctions; thermoelectricity;

D O I：

10.1109/IWPSD.2007.4472545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phonon drag contribution, S, to the thermopower in GaN/AlGaN heterojunctions is studied, for the first time, over the temperature range 2 < T < 100 K. The two-dimensional electrons are considered to interact via screened deformation and piezoelectric potentials, whereas the phonons are assumed to be scattered by sample boundaries, impurities, dislocations and other phonons. Numerical results for S-g are presented with the intrinsic phonon parameters obtained from thermal conductivity data. S. is found to be of the order of a few mV/K. The effect of dislocations is not only to reduce S-g but also to modify its behaviour.

引用

页码：446 / +

页数：3

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