Effect of dislocations on phonon drag thermopower in GaN/AlGaN heterojunctions

被引：0
|
作者：
Kamatagi, M. D. [1 ]
Sankeshwar, N. S. [2 ]
Mulimani, B. G. [2 ]
机构：
[1] BVB Coll Engn & Technol, Dept Phys, Hublin 580031, India
[2] Gulbarga Univ, Dept Phys, Gulbarga 585106, India
来源：
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年
关键词：
gallium compounds; semiconductor heterojunctions; thermoelectricity;
D O I：
10.1109/IWPSD.2007.4472545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The phonon drag contribution, S, to the thermopower in GaN/AlGaN heterojunctions is studied, for the first time, over the temperature range 2 < T < 100 K. The two-dimensional electrons are considered to interact via screened deformation and piezoelectric potentials, whereas the phonons are assumed to be scattered by sample boundaries, impurities, dislocations and other phonons. Numerical results for S-g are presented with the intrinsic phonon parameters obtained from thermal conductivity data. S. is found to be of the order of a few mV/K. The effect of dislocations is not only to reduce S-g but also to modify its behaviour.
引用
收藏
页码：446 / +
页数：3
相关论文
共 50 条
  • [1] Phonon drag thermopower in an AlGaN/GaN heterostructure
    Kubakaddi, SS
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 238 (01): : 40 - 44
  • [2] Low-temperature diffusion thermopower in GaN/AlGaN heterojunctions: Effect of dislocations
    Kamatagi, MD
    Sankeshwar, NS
    Mulimani, BG
    PHYSICAL REVIEW B, 2005, 71 (12)
  • [3] Theory of phonon drag thermopower
    Klemens, PG
    PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, : 206 - 208
  • [4] PHONON DRAG THERMOPOWER IN ALKALIS
    HAYMAN, B
    CARBOTTE, JP
    SOLID STATE COMMUNICATIONS, 1973, 12 (06) : 425 - 427
  • [5] Effect of Phonon Drag on the Thermopower in a Parabolic Quantum Well
    Hasanov, Kh. A.
    Huseynov, J. I.
    Dadashova, V. V.
    Aliyev, F. F.
    SEMICONDUCTORS, 2016, 50 (03) : 295 - 298
  • [6] Effect of electronic disorder on phonon-drag thermopower
    Sergeev, A
    Mitin, V
    PHYSICAL REVIEW B, 2002, 65 (06) : 1 - 7
  • [7] The phonon drag effect on thermopower in p-CdTe
    Gurevich, YG
    Vackova, S
    Zdansky, K
    PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, : 204 - 205
  • [8] Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
    Kaun, Stephen W.
    Burke, Peter G.
    Wong, Man Hoi
    Kyle, Erin C. H.
    Mishra, Umesh K.
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2012, 101 (26)
  • [9] Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions
    Hwang, Ya-Shi
    Liu, Lu
    Ren, Fan
    Polyakov, Alexander Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Kozhukhova, E. A.
    Kolin, N. G.
    Boiko, V. M.
    Vereyovkin, S. S.
    Ermakov, V. S.
    Lo, Chien-Fong
    Laboutin, Oleg
    Cao, Y.
    Johnson, J. W.
    Kargin, N. I.
    Ryzhuk, R. V.
    Pearton, Stephen J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (02):
  • [10] Phonon drag thermopower in doped bismuth
    V. D. Kagan
    N. A. Red’ko
    N. A. Rodionov
    V. I. Pol’shin
    O. V. Zotova
    Physics of the Solid State, 2004, 46 : 1410 - 1419
12345