Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis

被引：0

作者：

Dao Dinh Ha ^{[1
]}

Trung Tran Tuan ^{[1
]}

Volcheck, Vladislav ^{[2
]}

Stempitsky, Viktor ^{[2
]}

机构：

[1] Le Quy Don Tech Univ, Hanoi, Vietnam

[2] Belarusian State Univ Informat & Radioelect, Minsk, BELARUS

来源：

2019 12TH INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC 2019) | 2019年

关键词：

FIELD-EFFECT TRANSISTORS; GAN; HEMTS;

D O I：

10.1109/atc.2019.8924506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-consistently with the Poisson and the continuity equations to account for self-heating effects. It is shown that the acceptor centers intentionally introduced in the buffer layer of the device cause a shift of the input characteristics in the positive direction.

引用

页码：308 / 312

页数：5

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