Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis

被引：0
|
作者：
Dao Dinh Ha [1 ]
Trung Tran Tuan [1 ]
Volcheck, Vladislav [2 ]
Stempitsky, Viktor [2 ]
机构：
[1] Le Quy Don Tech Univ, Hanoi, Vietnam
[2] Belarusian State Univ Informat & Radioelect, Minsk, BELARUS
来源：
2019 12TH INTERNATIONAL CONFERENCE ON ADVANCED TECHNOLOGIES FOR COMMUNICATIONS (ATC 2019) | 2019年
关键词：
FIELD-EFFECT TRANSISTORS; GAN; HEMTS;
D O I：
10.1109/atc.2019.8924506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of the presence of iron-induced acceptor centers in the gallium nitride high electron mobility transistor is studied using device physics simulations at elevated temperatures (up to 600 K), as a lattice heat flow equation is solved self-consistently with the Poisson and the continuity equations to account for self-heating effects. It is shown that the acceptor centers intentionally introduced in the buffer layer of the device cause a shift of the input characteristics in the positive direction.
引用
收藏
页码：308 / 312
页数：5
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