P-type enhancement-mode SiGe doped-channel field-effect transistor

被引：2
|
作者：
Lin, YM
Wu, SL
Chang, SJ
Koh, S
Shiraki, Y
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan, Taiwan
[2] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung, Taiwan
[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 12A期
关键词：
doped channel; SiGe; carrier confinement;
D O I：
10.1143/JJAP.42.L1422
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, we report, for the first time, the fabrication and characterization of p-type doped-channel Si/SiGe field-effect transistors (DCFETs) using uniformly doping and delta doping in the SiGe conducting channel. For the same device parameters and process conditions, the delta-DCFET is shown having much smaller leakage current and larger current drivability than uniformly doped-channel FET (u-DCFET). This is because the additional V-shaped potential formed well by the delta-doped layer in the SiGe layer offers an excellent channel hole confinement and the larger forward turn-on voltage promises a linear operation over a wider dynamic range than that of u-DCFET.
引用
收藏
页码：L1422 / L1424
页数：3
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