Electrical barriers formation at the grain boundaries of Co-doped SnO2 varistor ceramics

被引：41
|
作者：
Metz, R. [1 ,2 ]
Koumeir, D. [1 ]
Morel, J. [1 ]
Pansiot, J. [1 ]
Houabes, M. [1 ]
Hassanzadeh, A. [3 ]
机构：
[1] Univ Lyon 1, CNRS Isochem, Lab Hydrazines & Precedes Lyon 1, Grp SNPE,UMR 5179, F-69622 Villeurbanne, France
[2] Univ Montpellier 2, Inst Charles Gerhardt, UMR Composante Physicochim Mat Organises Fonct 52, F-34095 Montpellier 5, France
[3] Areva T&D, DRC, F-34965 Montpellier 2, France
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2008年 / 28卷 / 04期
关键词：
varistors; SnO2; electrical properties; grain boundaries;
D O I：
10.1016/j.jeurceramsoc.2007.05.024
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The nonlinear electrical properties of CoO-doped SnO2 ceramics were characterized. A second phase is observed at the surface of the microstructure of the specimens. Energy-dispersive X-ray analysis reveals that the second phase is composed of tin, cobalt and oxygen with an approximate atomic ratio estimated for Co and Sn: 2: 1. The phase was identified by X-ray diffraction and unambiguously establish the identity of the phase: Co2SnO4. Electrical characterization of the binary CoO-SnO2 was carried out on a very large range of current from 10(-9) up to 100 A cm(-2) showing that the doping of CoO increases drastically the resistivity of the ceramic from 10(4) to 10(10) Omega cm. This value appears to be a threshold for which the nonlinear effect appears. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：829 / 835
页数：7
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