Characteristics of ZnS:Mn thin film electroluminescent device using layered BaTiO3 thin film structures

被引:11
|
作者
Song, MH
Lee, YH
Hahn, TS
Oh, MK
Yoon, KH
机构
[1] Korea Inst Sci & Technol, Div Elect & Informat Technol, Seoul, South Korea
[2] Yonsei Univ, Dept Ceram Engn, Seoul, South Korea
关键词
D O I
10.1016/S0038-1101(98)00129-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A multilayered and a double-layered BaTiO3 thin film structure were applied to the preparation of ZnS:Mn thin film electroluminescent (TFEL) devices. From the characterization of the TFEL devices, it was confirmed that the multilayered BaTiO3 thin film structure prepared by a new stacking method, i.e. deposition of an amorphous layer during continuous cooling of the substrate after the deposition of a polycrystalline layer at higher temperature, had very suitable electrical properties for the insulating layer of the TFEL device. The ZnS:Mn TFEL device using the multilayered BaTiO3 thin film structure showed stable efficiency characteristics with operating time as well as a low turn-on voltage of similar to 50 V and a high saturated brightness of similar to 3000 cd m(-2). (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1711 / 1717
页数:7
相关论文
共 50 条
  • [21] Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices
    N. T. Gurin
    O. Yu. Sabitov
    Technical Physics, 2006, 51 : 1012 - 1024
  • [22] On the low frequency efficiency of ZnS:Mn thin film electroluminescent devices
    Oprea, A
    Goldenblum, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 160 (01): : 265 - 269
  • [23] Electroluminescent cell prepared by chemical deposition of ZnS:Mn thin film
    Univ 'Sv. Kiril i Metodij', Skopje, Mk
    Thin Solid Films, 1-2 (149-151):
  • [24] Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures
    Gurin, N. T.
    Afanas'ev, A. M.
    Sabitov, O. Yu.
    Ryabov, D. V.
    SEMICONDUCTORS, 2006, 40 (08) : 920 - 933
  • [25] Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures
    N. T. Gurin
    A. M. Afanas’ev
    O. Yu. Sabitov
    D. V. Ryabov
    Semiconductors, 2006, 40 : 920 - 933
  • [26] Effect of ultraviolet radiation on a ZnS:Tb thin film electroluminescent device
    Kong, W.
    Solanki, R.
    1600, American Inst of Physics, Woodbury, NY, United States (75):
  • [27] LOW-VOLTAGE DRIVEN MOCVD-GROWN ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES USING INSULATING BATIO3 CERAMIC SHEETS
    MINAMI, T
    MIYATA, T
    KITAMURA, K
    NANTO, H
    TAKATA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05): : L876 - L879
  • [28] THE SHORT PULSE EXCITATION OF SNOX/ZNS/CUXS/ZNS(MN)/AL ELECTROLUMINESCENT THIN-FILM STRUCTURES
    GORDON, WS
    CHIMCZAK, E
    BERTRANDTZYTKOWIAK, M
    THIN SOLID FILMS, 1983, 110 (02) : 93 - 97
  • [29] Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn
    N. T. Gurin
    O. Yu. Sabitov
    A. M. Afanas’ev
    Semiconductors, 2010, 44 : 498 - 507
  • [30] Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn
    Gurin, N. T.
    Sabitov, O. Yu.
    Afanas'ev, A. M.
    SEMICONDUCTORS, 2010, 44 (04) : 498 - 507