Characteristic of ZnxCd1-xO alloy film grown by RF magnetron co-sputtering system.

被引：0

作者：

Yu, J. H. ^{[1
]}

Kim, J. H. ^{[1
]}

Jeong, T. S. ^{[2
]}

Youn, C. J. ^{[2
]}

机构：

[1] Jeonbuk Natl Univ, Dept Semicond & Chem Engn, Jeonju, South Korea

[2] Semicond Phys Res Ctr, Jeonju, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

基金：

新加坡国家研究基金会;

关键词：

ZnCdO; RF sputter; TRANSPARENT;

D O I：

10.1063/1.3666280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO based oxide system ZnxCd1-xO alloy of various compositions has been successfully grown by the RF co-sputtering system. ZnxCd1-xO alloy films, which have x= 0, 0.01, 0.02, 0.05, 0.08, 0.13 and 1, were grown on Al2O3 substrate. From the XRD measurement, the ZnxCd1-xO films observed to be hexagonal structure at the range of 0 <= x <= 0.08. At x=0.13, the mixed crystalline of the hexagonal-cubic structure was measured. Also, the optical bandgap energy has been modulated from 3.3eV to 2.4eV. After post-Annealing, the crystallinity of the ZnxCd1-xO films improved. Furthermore, this process suggests that it is very important to maintain the optical performance for LED and LD devices.

引用

页数：2

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