Electrical transport in single-wall carbon nanotubes

被引:0
|
作者
Biercuk, Michael J. [1 ,3 ]
Ilani, Shahal [2 ]
Marcus, Charles M. [3 ]
McEuen, Paul L. [2 ]
机构
[1] Booz Allen Hamilton, Arlington, VA 22203 USA
[2] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
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中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We review recent progress in the measurement and understanding of the electrical properties of individual metal and semiconducting single-wall carbon nanotubes. The fundamental scattering mechanisms governing the electrical transport in nanotubes are discussed, along with the properties of p-n and Schottky-barrier junctions in semiconductor tubes. The use of advanced nanotube devices for electronic, high-frequency, and electromechanical applications is discussed. We then examine quantum transport in carbon nanotubes, including the observation of quantized conductance, proximity-induced supercurrents, and spiu-dependent ballistic transport. We move on to explore the properties of single and coupled carbon-nanotube quantum dots. Spin and orbital (isospin) magnetic moments lead to fourfold shell structure and unusual Kondo phenomena. We Conclude with a discussion of unanswered questions and a look to future research directions.
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页码:455 / 493
页数:39
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